更多“To design a CMOS invertor with balance rise and fall time,please define the ration of channel width of PMOS and NMOS and explain?”相关问题
  • 第1题:

    please show the CMOS inverter schmatic,layout and its cross sectionwith P-well process.Plot its transfer curve (Vout-Vin) And also explain the operation region of PMOS and NMOS for each segment of the transfer curve? (威盛笔试题c ircuit design-beijing-03.11.09)


    正确答案:
            

  • 第2题:

    什么是NMOS、PMOS、CMOS?什么是增强型、耗尽型?什么是PNP、NPN?他们有什么差别?(仕兰微面试题目)


    正确答案:
     

  • 第3题:

    To design a CMOS invertor with balance rise and fall time,please define

    the ration of channel width of PMOS and NMOS and explain?


    正确答案:
              

  • 第4题:

    由下列器件构成的模拟开关中,导通电阻最低的是( )。

    A.CMOS场效应管

    B.PMOS场效应管

    C.NMOS场效应管

    D.二簧继电器


    正确答案:D

  • 第5题:

    Of the four possible tune movements, high fall is used for statements and wh-questions; high rise is used for questions asking for repetition of something; low rise is for yes/no questions, etc. and fall rise is for corrections and polite contradictions.()


    正确答案:正确

  • 第6题:

    ()the rise and fall of the tide.

    • A、Notice
    • B、Note
    • C、Attention
    • D、Look out

    正确答案:A

  • 第7题:

    单极型集成电路可分为()几种。

    • A、TTL型
    • B、TDK型
    • C、PMOS型
    • D、NMOS型
    • E、CMOS型

    正确答案:C,D,E

  • 第8题:

    下列场效应管中,无原始导电沟道的为()。

    • A、N沟道JFET
    • B、增强~AIPMOS管
    • C、耗尽型NMOS管
    • D、耗尽型PMOS管

    正确答案:B

  • 第9题:

    判断题
    对于N型衬底的单井CMOS工艺,NMOS的衬底应该接到高电位上。
    A

    B


    正确答案:
    解析: 暂无解析

  • 第10题:

    问答题
    同宽长比的PMOS和NMOS谁的阈值要大一些?

    正确答案: 同宽长比的PMOS的阈值要大一些
    解析: 暂无解析

  • 第11题:

    单选题
    Stand of the tide is that time when().
    A

    the vertical rise or fall of the tide has stopped

    B

    slack water occurs

    C

    tidal current is at a maximum

    D

    the actual depth of the water equals the charted depth


    正确答案: D
    解析: 暂无解析

  • 第12题:

    判断题
    Of the four possible tune movements, high fall is used for statements and wh-questions; high rise is used for questions asking for repetition of something; low rise is for yes/no questions, etc. and fall rise is for corrections and polite contradictions.()
    A

    B


    正确答案:
    解析: 暂无解析

  • 第13题:

    please draw the transistor level schematic of a cmos 2 input AND gate and explain which

    please draw the transistor level schematic of a cmos 2 input AND gate and explain which input has faster response for output rising edge.(less delay time)。(威盛笔试题circuit design-beijing-03.11.09)


    正确答案:
              

  • 第14题:

    Please explain how we describe the resistance in semiconductor. Compare the resistance of a metal,poly and diffusion in tranditional CMOS process.(威盛笔试题circuit design-beijing-03.11.09)


    正确答案:
            

  • 第15题:

    please draw the transistor level schematic of a cmos 2 input AND gate and

    explain which input has faster response for output rising edge.(less delay

    time)。(威盛笔试题circuit design-beijing-03.11.09)


    正确答案:
               

  • 第16题:

    Of the four possible tune movements, high fall is used for statements and wh-questions; high rise is used for questions asking for repetition of something; low rise is for yes/no questions, etc. and fall rise is for corrections and polite contradictions.()

    A

    B



  • 第17题:

    MOS集成电路按其形式有NMOS和PMOS两种。


    正确答案:错误

  • 第18题:

    采用了()门电路后,其比PMOS和NMOS门电路的功耗更低,速度更快。


    正确答案:CMOS

  • 第19题:

    单极性集成电路包括()

    • A、TTL集成电路
    • B、PMOS集成电路
    • C、NMOS集成电路
    • D、CMOS集成电路

    正确答案:B,C,D

  • 第20题:

    You are developing the Payroll application that contains the SALARY and COMMISSION forms. When a user invoked the COMMISSION form from the SALARY form, the SAL value should be passed to the COMMISSION form. In which data form and at what time should you define the parameter to accept the value?()

    • A、SALARY form at runtime. 
    • B、SALARY form at design time. 
    • C、COMMISSION form at runtime. 
    • D、COMMISSION form at design time. 

    正确答案:D

  • 第21题:

    问答题
    为什么NMOS工艺优于PMOS工艺?

    正确答案: N沟道FET的速度将比P沟道FET快2.5倍
    解析: 暂无解析

  • 第22题:

    填空题
    MOS型集成电路又分为NMOS、PMOS、()型。

    正确答案: CMOS
    解析: 暂无解析

  • 第23题:

    问答题
    NMOS和PMOS的源漏如何形成的?

    正确答案: NMOS是在P型衬底上,通过选择掺杂形成N型的掺杂区,作为NMOS的漏源区;PMOS是在N型衬底上,通过选择掺杂形成P型的掺杂区,作为PMOS的漏源区。
    解析: 暂无解析